AsianFin -- Jiufengshan Laboratory announced a major advancement in indium phosphide (InP) technology, successfully developing a 6-inch InP-based PIN structure detector and FP structure laser epitaxial growth process.

The key performance metrics of these devices have reached international leading levels, marking a significant milestone for China’s photonics industry.

This achievement represents the first domestic success in large-size InP material fabrication, demonstrating full-scale coordination from core equipment to critical material development.

The breakthrough is expected to provide strong support for the industrialization of optoelectronic devices in China, enhancing the country’s capabilities in high-performance lasers and detectors.